2SK1317 MOSFET N-Channel Power MOSFET TO-3P Package - 1500V 2.5A
2SK1317 MOSFET N-Channel Power MOSFET TO-3P Package - 1500V 2.5A
2SK1317 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications
Features:-
• High breakdown voltage VDSS = 1500 VÂ
• High speed switchingÂ
• Low drive current
• No secondary breakdownÂ
• Suitable for switching regulator, DC-DC converter and motor driver
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 1500V |
| Continuous Drain Current (Id) | 2.5A |
| Drain-Source Resistance (Rds On) | 12Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Configuration | Single |
| Operating Temperature Range | -55 - 150°C |
| Power Dissipation (Pd) | 100W |
2SK1317 MOSFET N-Channel Power MOSFET TO-3P Package - 1500V 2.5A
2SK1317 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications
Features:-
• High breakdown voltage VDSS = 1500 VÂ
• High speed switchingÂ
• Low drive current
• No secondary breakdownÂ
• Suitable for switching regulator, DC-DC converter and motor driver
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 1500V |
| Continuous Drain Current (Id) | 2.5A |
| Drain-Source Resistance (Rds On) | 12Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Configuration | Single |
| Operating Temperature Range | -55 - 150°C |
| Power Dissipation (Pd) | 100W |
Description
2SK1317 MOSFET N-Channel Power MOSFET TO-3P Package - 1500V 2.5A
2SK1317 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications
Features:-
• High breakdown voltage VDSS = 1500 VÂ
• High speed switchingÂ
• Low drive current
• No secondary breakdownÂ
• Suitable for switching regulator, DC-DC converter and motor driver
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 1500V |
| Continuous Drain Current (Id) | 2.5A |
| Drain-Source Resistance (Rds On) | 12Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Configuration | Single |
| Operating Temperature Range | -55 - 150°C |
| Power Dissipation (Pd) | 100W |
